NCE60P12K mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volta.
General Features
* VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
* High density cell.
The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
* VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <1.
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